Investigation of high quality GaAs:In layers grown by liquid phase epitaxy
Identifieur interne : 000174 ( Main/Exploration ); précédent : 000173; suivant : 000175Investigation of high quality GaAs:In layers grown by liquid phase epitaxy
Auteurs : RBID : ISTEX:11664_1994_Article_BF02649975.pdfEnglish descriptors
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Abstract
Indium-doped GaAs layers are investigated by low-field Hall effect, photoluminescence, and double crystal x-ray diffraction in order to study the influence of the In concentration on the electrical, optical, and crystallographic properties. The layers were grown by liquid phase epitaxy from solution with In concentrations in the range 0–10 at.%. It was found that epitaxial growth from the melt with 7 at.% In content produces the highest quality epitaxial layers.
DOI: 10.1007/BF02649975
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<record><TEI><teiHeader><fileDesc><titleStmt><title>Investigation of high quality GaAs:In layers grown by liquid phase epitaxy</title><author><name>M. Milanova</name><affiliation wicri:level="1"><mods:affiliation>Institute of Applied Physics, 4000, Plovdiv, Bulgaria</mods:affiliation><country xml:lang="fr">Bulgarie</country><wicri:regionArea>Institute of Applied Physics, 4000, Plovdiv</wicri:regionArea><wicri:noRegion>Plovdiv</wicri:noRegion></affiliation></author><author><name>T. Cholakova</name><affiliation wicri:level="1"><mods:affiliation>Institute of Applied Physics, 4000, Plovdiv, Bulgaria</mods:affiliation><country xml:lang="fr">Bulgarie</country><wicri:regionArea>Institute of Applied Physics, 4000, Plovdiv</wicri:regionArea><wicri:noRegion>Plovdiv</wicri:noRegion></affiliation></author><author><name>L. Bedikjan</name><affiliation wicri:level="1"><mods:affiliation>Institute of Applied Physics, 4000, Plovdiv, Bulgaria</mods:affiliation><country xml:lang="fr">Bulgarie</country><wicri:regionArea>Institute of Applied Physics, 4000, Plovdiv</wicri:regionArea><wicri:noRegion>Plovdiv</wicri:noRegion></affiliation></author><author><name>N. Stanev</name><affiliation wicri:level="1"><mods:affiliation>Institute of Applied Physics, 4000, Plovdiv, Bulgaria</mods:affiliation><country xml:lang="fr">Bulgarie</country><wicri:regionArea>Institute of Applied Physics, 4000, Plovdiv</wicri:regionArea><wicri:noRegion>Plovdiv</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11664_1994_Article_BF02649975.pdf</idno><date when="1994">1994</date><idno type="doi">10.1007/BF02649975</idno><idno type="wicri:Area/Main/Corpus">000D90</idno><idno type="wicri:Area/Main/Curation">000D90</idno><idno type="wicri:Area/Main/Exploration">000174</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>GaAs:In</term><term>Liquid phase epitaxy (LPE)</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Indium-doped GaAs layers are investigated by low-field Hall effect, photoluminescence, and double crystal x-ray diffraction in order to study the influence of the In concentration on the electrical, optical, and crystallographic properties. The layers were grown by liquid phase epitaxy from solution with In concentrations in the range 0–10 at.%. It was found that epitaxial growth from the melt with 7 at.% In content produces the highest quality epitaxial layers.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="efcac9a41087ac53e5a5769114568f3b8dcb0b78"><titleInfo lang="eng"><title>Investigation of high quality GaAs:In layers grown by liquid phase epitaxy</title></titleInfo><name type="personal"><namePart type="given">M.</namePart><namePart type="family">Milanova</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institute of Applied Physics, 4000, Plovdiv, Bulgaria</affiliation></name><name type="personal"><namePart type="given">T.</namePart><namePart type="family">Cholakova</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institute of Applied Physics, 4000, Plovdiv, Bulgaria</affiliation></name><name type="personal"><namePart type="given">L.</namePart><namePart type="family">Bedikjan</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institute of Applied Physics, 4000, Plovdiv, Bulgaria</affiliation></name><name type="personal"><namePart type="given">N.</namePart><namePart type="family">Stanev</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institute of Applied Physics, 4000, Plovdiv, Bulgaria</affiliation></name><typeOfResource>text</typeOfResource><genre>Regular Issue Papers</genre><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1994-01-11</dateCreated><dateValid encoding="w3cdtf">2007-06-11</dateValid><copyrightDate encoding="w3cdtf">1994</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Indium-doped GaAs layers are investigated by low-field Hall effect, photoluminescence, and double crystal x-ray diffraction in order to study the influence of the In concentration on the electrical, optical, and crystallographic properties. The layers were grown by liquid phase epitaxy from solution with In concentrations in the range 0–10 at.%. It was found that epitaxial growth from the melt with 7 at.% In content produces the highest quality epitaxial layers.</abstract><subject lang="eng"><genre>Key words</genre><topic>GaAs:In</topic><topic>liquid phase epitaxy (LPE)</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1994</partNumber><partNumber>Volume: 23</partNumber><partNumber>Number: 11</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1994-11-01</dateIssued><copyrightDate encoding="w3cdtf">1994</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Solid State Physics and Spectroscopy</topic><topic>Electronics and Microelectronics, Instrumentation</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 28</identifier><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1994</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02649975</identifier><identifier type="matrixNumber">Art25</identifier><identifier type="local">BF02649975</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>1235</start><end>1237</end></extent></part><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1994</recordOrigin><recordIdentifier>11664_1994_Article_BF02649975.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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